Poly(3-hexylthiophene-2,5-diyl) 445703-1G

Linear Formula:	(C10H14S)n
CAS Number:	156074-98-5
MDL number:	MFCD00217686
NACRES:	NA.23

Poly(3-hexylthiophene-2,5-diyl) (P3HT) is a poly(alkylthiophene) based semiconducting polymer that is hydrophobic at neutral state and has - conjugation in its backbone. It has a hole mobility is in the range of 10-3-10-1 cm2V-1s-1 and is commonly used in the development of field-effect transistors (FETs) for a wide range of applications.
Poly(3-hexylthiophene) (P3HT) is a regioregular semiconducting polymer. It is used in organic electronics primarily because of its regular end-to-end arrangement of side chain, which allows efficient p- p stacking of the conjugated backbones. On account of the alkyl side group, P3HT is rendered hydrophobic in neutral state. Solution-to-solid phase transformation and thin film formation of poly(3-hexylthiophene) (P3HT) was reported in a study.
Rechargeable battery electrodes, electrochromic devices, chemical and optical sensors, light-emitting diodes, microelectrical amplifiers, field-effect transistors and non-linear optical materials.
For the characterization and solid-state properties of this polymer, see J. Am. Chem. Soc. .
P3HT, an electron donor that acts as a semiconducting active layer in combination with an electron acceptor like fullerene derivative (6,6)-phenyl C61-butyric acid methylester (PCBM), can be used to fabricate bulk heterojunction (HJT) based organic solar cells (OSCs). Volatile organic compounds (VOCs)and electric sensor devices can be developed by using Langmuir-Schaefer (LS) films of P3HT and poly(3-octylthiophene)(P3OT). It can also be used with polystyrene to process a nano-scaled polymeric coating through spray coating onto carbon nanotube (CNT) powders.
Poly(3-hexylthiophene-2,5-diyl) may be used to fabricate ZnO nanowire arrays based photodiode. Regio- regular poly(3-hexylthiophene-2,5-diyl) may find extensive use as a semiconducting layer in organic thin film field effect transistor (FETs).
1 g in glass bottle
Packaged in glass bottles
Greater than 90% head-to-tail regiospecific conformation.
Good processibility, environmental stability and electroactivity.
Product of Rieke Metals, Inc.
Rieke is a registered trademark of Rieke Metals, Inc.

Quality Level	100
mol wt	average Mw 50,000-100,000
conductivity	~103 S/cm (when doped with iodine)
mp	238 °C, 238 °C
fluorescence	ex 443 nm; em 568 nm in chloroform
Orbital energy	HOMO 5 eV , LUMO 3 eV A
OPV Device Performance	ITO/NiO/P3HT/PC61BM/LiF/Al Short-circuit current density (Jsc): 11.3 mA/cm2 Open-circuit voltage (Voc): 0.64 V Fill Factor (FF): 0.69 Power Conversion Efficiency (PCE): 5.16 % , ITO/PEDOT:PSS/P3HT:PC61BM (1:08)/Al Short-circuit current density (Jsc): 9.5 mA/cm2 Open-circuit voltage (Voc): 0.63 V Fill Factor (FF): 0.68 Power Conversion Efficiency (PCE): 5 %
semiconductor properties	P-type (mobility=1E-4-1E-1 cm2/V·s)

pictograms	GHS07
signalword	Warning
hcodes	H315 - H319 - H335
pcodes	P302 + P352 - P305 + P351 + P338
Target Organs	Respiratory system
Personal Protective Equipment	dust mask type N95 (US), Eyeshields, Gloves
RIDADR	NONH for all modes of transport
WGK Germany	WGK 3
Flash Point F	Not applicable
Flash Point C	Not applicable